SPI11N65C3XKSA1

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SPI11N65C3XKSA1 - Infineon
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Краткое описание: N-CHANNEL MOSFET 650V 11A 380mR TO-262-3 Through Hole
Производитель Infineon
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The Infineon SPI11N65C3XKSA1 is a N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 11A and a drain to source resistance of 380mR. The device is packaged in a TO-262-3 package and is mounted through a hole. The MOSFET has a maximum power dissipation of 125W and a gate to source voltage of 20V.
RoHS Not Compliant
Mount Through Hole
Width 4.52mm
Height 9.45mm
Length 10.36mm
Series CoolMOS™
Polarity N-CHANNEL
Packaging Rail/Tube
Rds On Max 380mR
Package/Case TO-262-3
RoHS Compliant No
Package Quantity 500
Input Capacitance 1.2nF
Turn-On Delay Time 10ns
Turn-Off Delay Time 44ns
Max Power Dissipation 125W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 380mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 11A
Drain to Source Voltage (Vdss) 650V

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