SPI12N50C3
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Краткое описание:
500V N-Channel MOSFET, 11.6A, 380mR, TO-262
Дополнительная информация
N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 11.6A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 380mΩ drain-to-source resistance and a maximum power dissipation of 125W. Designed for efficient switching, it exhibits a turn-on delay time of 10ns and a fall time of 8ns. Packaged in a TO-262-3 (I2PAK) plastic housing, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Width | 4.57mm |
| Height | 9.45mm |
| Length | 10.36mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 380mR |
| Package/Case | TO-262-3 |
| Current Rating | 11.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 560V |
| Package Quantity | 500 |
| Input Capacitance | 1.2nF |
| Power Dissipation | 125W |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11.6A |
| Drain to Source Breakdown Voltage | 500V |
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