SPI15N60CFD
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Краткое описание:
600V 13.4A N-Channel MOSFET TO-262-3
Дополнительная информация
N-Channel Power MOSFET, 600V Drain to Source Breakdown Voltage, 13.4A Continuous Drain Current, and 330mΩ Drain to Source Resistance. Features a 156W maximum power dissipation and operates within a temperature range of -55°C to 150°C. This silicon Metal-Oxide Semiconductor FET is housed in a TO-262-3 package with through-hole termination. Includes a 4V threshold voltage and a 1.82nF input capacitance.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 330mR |
| Nominal Vgs | 4V |
| Termination | Through Hole |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 1.82nF |
| Power Dissipation | 156W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 43ns |
| Dual Supply Voltage | 650V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 47ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 156W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 330mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 13.4A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
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