SPN03N60S5
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Краткое описание:
600V N-Channel MOSFET, 1.4R Rds(on), 700mA ID, SOT-223
Дополнительная информация
N-Channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 700mA Continuous Drain Current, and 1.4 Ohm Drain-Source Resistance. This silicon Metal-oxide Semiconductor FET features a SOT-223 package for surface mounting, with a maximum power dissipation of 1.8W. Operating temperature range spans from -55°C to 150°C, with typical turn-on delay of 35ns and turn-off delay of 120ns. Input capacitance is 440pF, and it supports a Gate-to-Source Voltage of 20V.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.6mm |
| Length | 6.5mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 1.4R |
| Package/Case | SOT-223 |
| Current Rating | 700mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Input Capacitance | 440pF |
| Power Dissipation | 1.8W |
| Turn-On Delay Time | 35ns |
| Turn-Off Delay Time | 120ns |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 700mA |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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