SPP02N60S5
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Краткое описание:
600V N-Channel MOSFET, 1.8A, 3 Ohm, TO-220
Дополнительная информация
N-channel power MOSFET with 600V drain-source breakdown voltage and 1.8A continuous drain current. Features 3 Ohm drain-source resistance (Rds On Max) and 25W maximum power dissipation. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-220-3 configuration, this silicon Metal-oxide Semiconductor FET offers a 20V gate-source voltage rating and includes fast switching characteristics with turn-on and turn-off delay times of 35ns.
| RoHS | Compliant |
| Width | 10.26mm |
| Height | 4.4mm |
| Length | 8.64mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3R |
| Halogen Free | Not Halogen Free |
| Package/Case | TO-220-3 |
| Current Rating | 1.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 50 |
| Input Capacitance | 240pF |
| Power Dissipation | 25W |
| Turn-On Delay Time | 35ns |
| Turn-Off Delay Time | 35ns |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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