SPP03N60S5
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Краткое описание:
600V 3.2A N-Channel MOSFET, 1.4 Ohm Rds(on), TO-220
Дополнительная информация
N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 3.2A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.4 ohm drain-to-source resistance (Rds On Max) and a maximum power dissipation of 38W. Designed for efficient switching, it exhibits turn-on delay time of 35ns and fall time of 15ns. Packaged in a TO-220-3 configuration, this component operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Width | 4.4mm |
| Height | 9.25mm |
| Length | 10mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Rds On Max | 1.4R |
| Package/Case | TO-220-3 |
| Current Rating | 3.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 500 |
| Input Capacitance | 420pF |
| Power Dissipation | 38W |
| Turn-On Delay Time | 35ns |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 38W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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