SPP04N60C3XKSA1
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Краткое описание:
650V N-CH MOSFET 4.5A TO-220 950mR RdsOn
Дополнительная информация
N-channel MOSFET featuring 650V drain-to-source breakdown voltage and 4.5A continuous drain current. This through-hole component offers a maximum power dissipation of 50W and a low on-resistance of 850mΩ. Key switching characteristics include a 6ns turn-on delay and 9.5ns fall time, with an input capacitance of 490pF. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 9.5ns |
| Packaging | Rail/Tube |
| Rds On Max | 950mR |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 490pF |
| Power Dissipation | 50W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 6ns |
| Dual Supply Voltage | 650V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 58.5ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 850mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 650V |
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