SPP07N60S5
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Краткое описание:
600V 7.3A N-Channel MOSFET TO-220AB
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 7.3A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 600mΩ Rds On and 650V DC rated voltage. Designed for efficient power switching, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 83W. Packaged in a TO-220-3 configuration, this component is RoHS compliant.
| RoHS | Compliant |
| Width | 4.57mm |
| Height | 9.45mm |
| Length | 10.36mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Rds On Max | 600mR |
| Package/Case | TO-220-3 |
| Current Rating | 7.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 500 |
| Input Capacitance | 970pF |
| Power Dissipation | 82W |
| Threshold Voltage | 4.5V |
| Turn-On Delay Time | 120ns |
| Turn-Off Delay Time | 170ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 600mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
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