SPP08P06P
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P-Channel MOSFET, 60V, 8.8A, 300mR, TO-220AB
Дополнительная информация
P-channel power MOSFET with 60V drain-source breakdown voltage and 8.8A continuous drain current. Features 300mΩ drain-source resistance at a nominal Vgs of -3V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 42W. Packaged in a TO-220AB through-hole mount with 3 pins. Includes fast switching characteristics with turn-on delay of 16ns and fall time of 14ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.57mm |
| Height | 15.95mm |
| Length | 10.36mm |
| Series | SIPMOS® |
| Polarity | P-CHANNEL |
| Fall Time | 14ns |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Lead Pitch | 2.54mm |
| Rds On Max | 300mR |
| Nominal Vgs | -3V |
| Termination | Through Hole |
| Package/Case | TO-220AB |
| Current Rating | -8.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 500 |
| Input Capacitance | 420pF |
| Power Dissipation | 42W |
| Turn-On Delay Time | 16ns |
| Dual Supply Voltage | -60V |
| Turn-Off Delay Time | 48ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 42W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 300mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.8A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | -60V |
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