SPP11N60S5
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Краткое описание:
600V 11A N-Channel MOSFET TO-220AB
Дополнительная информация
N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 11A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.38ohm drain-to-source resistance (Rds On Max) and 125W maximum power dissipation. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-220AB plastic housing. Key switching parameters include a 20ns fall time, 130ns turn-on delay, and 150ns turn-off delay.
| RoHS | Compliant |
| Width | 10.26mm |
| Height | 4.4mm |
| Length | 8.64mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Rds On Max | 380mR |
| Package/Case | TO-220-3 |
| Current Rating | 11A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 500 |
| Input Capacitance | 1.46nF |
| Power Dissipation | 125W |
| Turn-On Delay Time | 130ns |
| Turn-Off Delay Time | 150ns |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
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