SPP12N50C3
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Краткое описание:
500V N-Channel MOSFET, 11.6A, 380mR, TO-220
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 11.6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.38ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 125W. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 150°C and is housed in a TO-220-3 package. Key switching characteristics include a 10ns turn-on delay and an 8ns fall time.
| RoHS | Compliant |
| Width | 4.57mm |
| Height | 15.95mm |
| Length | 10.36mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 380mR |
| Package/Case | TO-220-3 |
| Current Rating | 11.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 560V |
| Package Quantity | 500 |
| Input Capacitance | 1.2nF |
| Power Dissipation | 125W |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11.6A |
| Drain to Source Voltage (Vdss) | 560V |
| Drain to Source Breakdown Voltage | 500V |
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