SPP15N60C3XKSA1
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Краткое описание:
600V 15A N-CH MOSFET TO-220AB
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 15A continuous drain current. This TO-220-3 packaged transistor offers a low 280mΩ on-state resistance and 156W maximum power dissipation. Key electrical characteristics include a 650V DC rated voltage, 20V gate-source voltage, and fast switching times with a 5ns fall time. Designed for through-hole termination, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Width | 4.57mm |
| Height | 15.95mm |
| Length | 10.36mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 280mR |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| Current Rating | 15A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 500 |
| Input Capacitance | 1.66nF |
| Power Dissipation | 156W |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 650V |
| On-State Resistance | 280mR |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 156W |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
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