SPP15N65C3
Снят с производства
Увеличить
Краткое описание:
650V 15A N-Channel MOSFET TO-220AB
Дополнительная информация
N-channel power MOSFET featuring 650V drain-source breakdown voltage and 15A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 280mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-220-3 package, it operates within a -55°C to 150°C temperature range and supports a maximum power dissipation of 156W. Key switching parameters include an 11ns fall time and 32ns turn-on delay time.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Packaging | Rail/Tube |
| Rds On Max | 280mR |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 1.6nF |
| Power Dissipation | 156W |
| Turn-On Delay Time | 32ns |
| Dual Supply Voltage | 650V |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 156W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 650V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
