SPP16N50C3XKSA1
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Краткое описание:
560V 16A N-CH MOSFET TO-220AB
Дополнительная информация
N-channel power MOSFET featuring 560V drain-source breakdown voltage and 16A continuous drain current. This TO-220-3 packaged transistor offers a low Rds(on) of 280mΩ at a nominal Vgs of 3V. Designed for efficient switching, it exhibits fast switching characteristics with turn-on delay time of 10ns and fall time of 8ns. Maximum power dissipation is rated at 160W, with operating temperatures ranging from -55°C to 150°C.
| RoHS | Compliant |
| Width | 4.57mm |
| Height | 15.95mm |
| Length | 10.36mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Rail/Tube |
| Rds On Max | 280mR |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Package/Case | TO-220-3 |
| Current Rating | 16A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 560V |
| Package Quantity | 500 |
| Input Capacitance | 1.6nF |
| Power Dissipation | 160W |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 560V |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 160W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 560V |
| Drain to Source Breakdown Voltage | 560V |
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