SPP18P06P
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P-Channel MOSFET, 60V, 18.7A, 130mR, TO-220AB
Дополнительная информация
P-channel power MOSFET featuring 60V drain-source breakdown voltage and 18.7A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 130mΩ drain-source resistance (Rds On Max) and 81.1W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 12ns turn-on delay and 11ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.57mm |
| Height | 9.45mm |
| Length | 10.36mm |
| Series | SIPMOS® |
| Polarity | P-CHANNEL |
| Fall Time | 11ns |
| Packaging | Rail/Tube |
| Lead Pitch | 2.54mm |
| Rds On Max | 130mR |
| Nominal Vgs | -3V |
| Termination | Through Hole |
| Package/Case | TO-220AB |
| Current Rating | -18.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 500 |
| Input Capacitance | 860pF |
| Power Dissipation | 81.1W |
| Turn-On Delay Time | 12ns |
| Dual Supply Voltage | -60V |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 81.1W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 130mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 18.7A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | -60V |
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