SPP20N60CFDXKSA1
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Краткое описание:
650V 20.7A N-CH MOSFET TO-220
Дополнительная информация
N-channel power MOSFET with 650V drain-source breakdown voltage and 20.7A continuous drain current. Features low Rds(on) of 220mΩ at a nominal Vgs of 4V, and fast switching speeds with a turn-on delay of 12ns and fall time of 6.4ns. Housed in a TO-220-3 package for through-hole mounting, this RoHS compliant component offers a maximum power dissipation of 208W and operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Width | 4.57mm |
| Height | 9.45mm |
| Length | 10.36mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 6.4ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 220mR |
| Nominal Vgs | 4V |
| Termination | Through Hole |
| Package/Case | TO-220-3 |
| Current Rating | 20.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 500 |
| Input Capacitance | 2.4nF |
| Power Dissipation | 208W |
| Turn-On Delay Time | 12ns |
| Dual Supply Voltage | 650V |
| Turn-Off Delay Time | 59ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 208W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 220mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20.7A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 650V |
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