SPP20N65C3XKSA1
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Краткое описание:
650V 20.7A N-Channel MOSFET TO-220
Дополнительная информация
N-Channel Power MOSFET featuring 650V drain-source breakdown voltage and 20.7A continuous drain current. Offers low on-state resistance of 190mΩ at a nominal Vgs of 3V. Designed with a 4.5ns fall time and 10ns turn-on delay time, this silicon Metal-oxide Semiconductor FET is housed in a TO-220-3 package with through-hole termination. Maximum power dissipation is 208W, operating from -55°C to 150°C. RoHS compliant and halogen-free.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 4.5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| Current Rating | 20.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 500 |
| Input Capacitance | 2.4nF |
| Power Dissipation | 208W |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 650V |
| On-State Resistance | 200mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 67ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 208W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20.7A |
| Drain to Source Breakdown Voltage | 650V |
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