SPP21N50C3XKSA1
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Краткое описание:
N-Channel MOSFET, 500V, 21A, 190mR, TO-220, Through Hole
Дополнительная информация
N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 21A continuous drain current. Offers low 190mΩ on-state resistance and 560V DC rated voltage. Packaged in a TO-220-3 through-hole configuration with a maximum power dissipation of 208W. Designed for efficient switching with fast turn-on (10ns) and turn-off (67ns) delay times. RoHS and Halogen Free compliant.
| RoHS | Compliant |
| Width | 4.57mm |
| Height | 9.45mm |
| Length | 10.36mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 4.5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| Current Rating | 21A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 560V |
| Package Quantity | 500 |
| Input Capacitance | 2.4nF |
| Power Dissipation | 208W |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 560V |
| On-State Resistance | 190mR |
| Turn-Off Delay Time | 67ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 208W |
| Max Dual Supply Voltage | 500V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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