SPP24N60CFD
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Краткое описание:
600V 21.7A N-Channel MOSFET TO-220AB
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 21.7A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 185mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 240W. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C and boasts fast switching speeds with a 50ns turn-on delay and 9ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 185mR |
| Nominal Vgs | 4V |
| Termination | Through Hole |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 3.16nF |
| Power Dissipation | 240W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 50ns |
| Dual Supply Voltage | 650V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 240W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 185mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 21.7A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
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