SPP80N03S2L-04
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N-Channel MOSFET, 80A, 30V, 4.2mR Rds(on), TO-220
Дополнительная информация
N-channel power MOSFET featuring 30V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 4.2mΩ drain-source resistance (Rds On Max) and 188W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, it operates from -55°C to 175°C and boasts fast switching characteristics with a 13ns turn-on delay and 19ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4.2mR |
| Package/Case | TO-220-3 |
| Current Rating | 80A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 500 |
| Input Capacitance | 3.9nF |
| Power Dissipation | 188W |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 54ns |
| Max Power Dissipation | 188W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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