SPS01N60C3
Снят с производства
Увеличить
Краткое описание:
650V N-Channel MOSFET, 6R Rds(on), 800mA ID, TO-251
Дополнительная информация
N-channel power MOSFET featuring 650V drain-source breakdown voltage and 800mA continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 6-ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 11W. Designed for through-hole mounting in a TO-251 package, it operates within a temperature range of -55°C to 150°C and boasts fast switching speeds with a 30ns fall time and 30ns turn-on delay. This RoHS compliant component is ideal for power switching applications.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 6R |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1500 |
| Input Capacitance | 100pF |
| Power Dissipation | 11W |
| Turn-On Delay Time | 30ns |
| Dual Supply Voltage | 650V |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 11W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 800mA |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 650V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
