SPS02N60C3
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Краткое описание:
650V 1.8A N-CH MOSFET TO-251 3R
Дополнительная информация
N-Channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 1.8A Continuous Drain Current, and 3 Ohm Rds On. Features include a 650V Vdss, 20V Vgs, 12ns fall time, 6ns turn-on delay, and 68ns turn-off delay. This silicon Metal-oxide Semiconductor FET is housed in a TO-251 plastic package, offering 25W power dissipation and operating from -55°C to 150°C. It is RoHS compliant and available in rail/tube packaging.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3R |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1500 |
| Input Capacitance | 200pF |
| Power Dissipation | 25W |
| Turn-On Delay Time | 6ns |
| Dual Supply Voltage | 650V |
| Turn-Off Delay Time | 68ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 650V |
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