SPU01N60C3
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Краткое описание:
600V N-Ch MOSFET, 800mA ID, 6R RdsOn, TO-251
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 6Ω drain-source resistance. This silicon, metal-oxide semiconductor FET offers 800mA continuous drain current and a maximum power dissipation of 11W. Designed for efficient switching, it exhibits typical turn-on delay of 30ns and fall time of 30ns. Encased in a TO-251-3 (IPAK) package, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Width | 6.22mm |
| Height | 2.41mm |
| Length | 6.73mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 6R |
| Package/Case | TO-251-3 |
| Current Rating | 800mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 1500 |
| Input Capacitance | 100pF |
| Power Dissipation | 11W |
| Turn-On Delay Time | 30ns |
| Turn-Off Delay Time | 55ns |
| Max Power Dissipation | 11W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 800mA |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
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