SPU02N60C3
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Краткое описание:
600V N-Channel MOSFET, 1.8A, 3 Ohm, TO-251
Дополнительная информация
N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 1.8A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 3-ohm drain-to-source resistance. Designed for through-hole mounting in a TO-251AA package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 25W. Key switching characteristics include a 6ns turn-on delay and a 12ns fall time.
| RoHS | Compliant |
| Width | 2.41mm |
| Height | 6.22mm |
| Length | 6.73mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3R |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Package/Case | TO-251-3 |
| Current Rating | 1.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 1500 |
| Input Capacitance | 200pF |
| Power Dissipation | 25W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 6ns |
| Dual Supply Voltage | 650V |
| Turn-Off Delay Time | 68ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
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