SPU03N60C3
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Краткое описание:
600V 3.2A N-Channel MOSFET, 1.4Ω, TO-251
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 3.2A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 1.4 ohm drain-source resistance (Rds On Max) and is housed in a TO-251-3 package for through-hole termination. Key electrical characteristics include a 650V drain-source voltage (Vdss), 20V gate-source voltage (Vgs), and 400pF input capacitance. Operating across a wide temperature range from -55°C to 150°C, this component supports a maximum power dissipation of 38W.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Packaging | Rail/Tube |
| Rds On Max | 1.4R |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1500 |
| Input Capacitance | 400pF |
| Power Dissipation | 38W |
| Turn-On Delay Time | 7ns |
| Dual Supply Voltage | 650V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 64ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 38W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
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