SPU07N60C3
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Краткое описание:
600V 7.3A N-Channel MOSFET TO-251
Дополнительная информация
N-Channel Power MOSFET featuring 650V drain-source voltage and 7.3A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 600mΩ Rds On resistance and 83W maximum power dissipation. Designed with a TO-251-3 (IPAK-3) package, it boasts fast switching speeds with a 6ns turn-on delay and 7ns fall time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is ideal for power switching applications.
| RoHS | Compliant |
| Width | 2.41mm |
| Height | 6.22mm |
| Length | 6.73mm |
| Series | CoolMOS™ |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 600mR |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Package/Case | TO-251-3 |
| Current Rating | 7.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 1500 |
| Input Capacitance | 790pF |
| Turn-On Delay Time | 6ns |
| Dual Supply Voltage | 650V |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Voltage (Vdss) | 650V |
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