SPW11N60S5
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Краткое описание:
600V 11A N-Channel MOSFET TO-247 380mR RdsOn
Дополнительная информация
N-channel MOSFET, 600V drain-source breakdown voltage, 11A continuous drain current, and 380mΩ Rds On. This silicon Metal-Oxide Semiconductor FET features a TO-247 package, 125W maximum power dissipation, and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 130ns turn-on delay, 150ns turn-off delay, and a 20ns fall time. Input capacitance is 1.46nF, with a maximum gate-to-source voltage of 20V. This RoHS compliant component is supplied in rail/tube packaging.
| RoHS | Compliant |
| Width | 5.3mm |
| Height | 20.95mm |
| Length | 15.9mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 380mR |
| Package/Case | TO-247-3 |
| Current Rating | 11A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 240 |
| Input Capacitance | 1.46nF |
| Power Dissipation | 125W |
| Turn-On Delay Time | 130ns |
| Turn-Off Delay Time | 150ns |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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