SPW12N50C3
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Краткое описание:
500V 11.6A N-Channel MOSFET TO-247 380mR RdsOn
Дополнительная информация
N-Channel Power MOSFET, 500V breakdown voltage, 11.6A continuous drain current, and 380mΩ Rds On. Features include 125W power dissipation, 1.2nF input capacitance, and 10ns turn-on delay. Operates from -55°C to 150°C, with a 20V gate-source voltage rating. Packaged in TO-247AD with through-hole termination, this RoHS compliant component is ideal for high-power applications.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Lead Pitch | 5.45mm |
| Rds On Max | 380mR |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Package/Case | TO-247-3 |
| Current Rating | 11.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 560V |
| Package Quantity | 240 |
| Input Capacitance | 1.2nF |
| Power Dissipation | 125W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 560V |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11.6A |
| Drain to Source Breakdown Voltage | 560V |
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