SPW17N80C3
Производится
Увеличить
Краткое описание:
800V 17A N-Channel MOSFET TO-247
Дополнительная информация
N-channel power MOSFET featuring 800V drain-source voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 290mΩ at 17A and a maximum power dissipation of 227W. Designed for high-voltage applications, it operates within a temperature range of -55°C to 150°C and is housed in a TO-247-3 plastic package. Key switching characteristics include a 25ns turn-on delay and a 12ns fall time.
| RoHS | Compliant |
| Width | 5.21mm |
| Height | 21.1mm |
| Length | 16.13mm |
| Series | CoolMOS™ |
| Current | 17A |
| Voltage | 800V |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 290mR |
| Package/Case | TO-247-3 |
| Current Rating | 17A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 240 |
| Input Capacitance | 2.32nF |
| Power Dissipation | 227W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 72ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 208W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 800V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
