SPW17N80C3A
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Краткое описание:
Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3
Дополнительная информация
Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3
| RoHS | Not Compliant |
| Mount | Through Hole |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 290mR |
| Package/Case | TO-247-3 |
| Current Rating | 17A |
| RoHS Compliant | No |
| DC Rated Voltage | 800V |
| Input Capacitance | 2.32nF |
| Power Dissipation | 208W |
| Turn-Off Delay Time | 72ns |
| Max Power Dissipation | 227W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 290mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
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