SPW20N60S5
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Краткое описание:
600V 20A N-Channel MOSFET, 190mR Rds On, TO-247
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 20A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 190mΩ drain-source resistance and 208W maximum power dissipation. Designed for high-efficiency switching applications, it operates within a -55°C to 150°C temperature range and is housed in a TO-247-3 plastic package. Key switching characteristics include a 30ns fall time, 120ns turn-on delay, and 130ns turn-off delay.
| RoHS | Compliant |
| Width | 5.3mm |
| Height | 20.95mm |
| Length | 15.9mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| Package/Case | TO-247-3 |
| Current Rating | 20A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 240 |
| Input Capacitance | 3nF |
| Power Dissipation | 208W |
| Threshold Voltage | 4.5V |
| Turn-On Delay Time | 120ns |
| Turn-Off Delay Time | 130ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 208W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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