SPW52N50C3
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Краткое описание:
500V 52A N-Channel MOSFET TO-247 70mR RdsOn
Дополнительная информация
N-channel power MOSFET featuring 500V drain-source voltage and 52A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 70mΩ at a gate-source voltage of 10V. With a maximum power dissipation of 417W and operating temperatures from -55°C to 150°C, it is housed in a TO-247-3 plastic package. Key switching characteristics include a 20ns turn-on delay and 120ns turn-off delay, with a 10ns fall time.
| RoHS | Compliant |
| Width | 5.21mm |
| Height | 21.1mm |
| Length | 16.13mm |
| Series | CoolMOS™ |
| Current | 52A |
| Voltage | 560V |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 70mR |
| Package/Case | TO-247-3 |
| Current Rating | 52A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 560V |
| Package Quantity | 240 |
| Input Capacitance | 6.8nF |
| Power Dissipation | 417W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 120ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 417W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 52A |
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