SQ2360EES-T1-GE3
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Краткое описание:
N-Channel MOSFET, 60V, 4.4A, 85mR, SOT-23-3
Дополнительная информация
N-channel MOSFET, 60V drain-source breakdown voltage, 85mΩ maximum drain-source resistance, and 4.4A continuous drain current. Features a 1.5V threshold voltage, 370pF input capacitance, and 5ns turn-on delay. Operates from -55°C to 175°C with a 3W maximum power dissipation. Surface mountable in a SOT-23-3 package, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 85mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 370pF |
| Power Dissipation | 3W |
| Threshold Voltage | 1.5V |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 85mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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