SQ3418EEV-T1-GE3
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Краткое описание:
N-Channel MOSFET, 40V, 8A, 32mR, TSOP, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 40V Drain-Source Voltage, 8A Continuous Drain Current, and 32mΩ maximum Drain-Source On-Resistance. Features include a 2V Threshold Voltage, 660pF Input Capacitance, and fast switching times with 8ns Turn-On Delay and 7ns Fall Time. This surface-mount device operates from -55°C to 175°C with a 5W maximum power dissipation. It is HALOGEN FREE and ROHS COMPLIANT, packaged in TSOP for tape and reel delivery.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 32mR |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 660pF |
| Power Dissipation | 5W |
| Threshold Voltage | 2V |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 32mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 48mR |
| Drain to Source Breakdown Voltage | 40V |
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