SQ3419EEV-T1-GE3

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SQ3419EEV-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-Ch MOSFET -40V -7.4A 50mR TSOP Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

P-Channel MOSFET, 40V Drain-Source Voltage, -7.4A Continuous Drain Current, 50mΩ Max Drain-Source On-Resistance. Features 5W Max Power Dissipation, 175°C Max Operating Temperature, and TSOP package for surface mounting. Includes 9ns Turn-On Delay Time and 10ns Fall Time. RoHS compliant.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.000705oz
Polarity P-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 50mR
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 1.065nF
Threshold Voltage -1.5V
Number of Channels 1
Turn-On Delay Time 9ns
Radiation Hardening No
Turn-Off Delay Time 26ns
Reach SVHC Compliant Unknown
Max Power Dissipation 5W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 50mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) -7.4A
Drain to Source Voltage (Vdss) -40V
Drain-source On Resistance-Max 78mR

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