SQ3427EEV-T1-GE3

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SQ3427EEV-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET, -60V, -5.5A, 82mR, TSOP
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET with -60V drain-source voltage and -5.5A continuous drain current. Features 82mΩ drain-to-source resistance and 5W maximum power dissipation. Operates across a -55°C to 175°C temperature range. Surface mountable in a 6TSOP package, this RoHS compliant component offers fast switching with 10ns turn-on and 26ns turn-off delay times.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.000705oz
Polarity P-CHANNEL
Fall Time 12ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 82mR
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 1.125nF
Threshold Voltage -1.5V
Number of Channels 1
Turn-On Delay Time 10ns
Radiation Hardening No
Turn-Off Delay Time 26ns
Reach SVHC Compliant Unknown
Max Power Dissipation 5W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 82mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -5.5A
Drain to Source Voltage (Vdss) -60V

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