SQD19P06-60L_GE3
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Краткое описание:
Power Field-Effect Transistor, 20A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3/2
Дополнительная информация
Power Field-Effect Transistor, 20A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3/2
| RoHS | Yes |
| REACH | Compliant |
| Eccn Code | EAR99 |
| Military Spec | False |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Max Operating Temperature | 175 |
