SQD23N06-31L-GE3

Снят с производства
SQD23N06-31L-GE3 - Vishay(Siliconix)
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Краткое описание: 60V 23A 31mR N-CH MOSFET TO-252 Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

N-channel MOSFET, 60V drain-source voltage, 23A continuous drain current, and 31mΩ drain-source resistance. Features a TO-252-3 surface mount package, 2V threshold voltage, and 845pF input capacitance. Operates with a 20V gate-source voltage, offering fast switching with 8ns turn-on delay and 30ns turn-off delay. Maximum power dissipation is 37W, with an operating temperature range of -55°C to 175°C.
RoHS Compliant
Mount Surface Mount
Width 6.22mm
Height 2.39mm
Length 6.73mm
Series TrenchFET®
Weight 0.050717oz
Polarity N-CHANNEL
Fall Time 25ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 31mR
Package/Case TO-252-3
Package Quantity 2000
Input Capacitance 845pF
Threshold Voltage 2V
Number of Channels 1
Turn-On Delay Time 8ns
Radiation Hardening No
Turn-Off Delay Time 30ns
Reach SVHC Compliant Unknown
Max Power Dissipation 37W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 31mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 23A
Drain to Source Voltage (Vdss) 60V

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