SQD45N05-20L-GE3
Производится
Увеличить
Краткое описание:
N-CHANNEL TrenchFET MOSFET 50V 50A 18mR 175°C Surface Mount
Дополнительная информация
The SQD45N05-20L-GE3 is a N-CHANNEL TrenchFET MOSFET with a drain to source breakdown voltage of 50V and a continuous drain current of 50A. It has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. The device is surface mountable and has a maximum power dissipation of 75W. It is RoHS compliant and packaged in a TO-252-3 package with 2000 devices per reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 1.8nF |
| Power Dissipation | 2.5W |
| Turn-Off Delay Time | 32ns |
| Max Power Dissipation | 75W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 18mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 50V |
| Drain to Source Breakdown Voltage | 50V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
