SQD50N06-09L-GE3
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Краткое описание:
60V 50A N-CH MOSFET, 9mR Rds On, TO-252, Power
Дополнительная информация
N-channel power MOSFET with 60V drain-source voltage and 50A continuous drain current. Features low 9mΩ drain-to-source resistance (Rds On Max) and 136W power dissipation. Operates from -55°C to 175°C, with fast switching speeds including 10ns turn-on delay and 8ns fall time. Packaged in a TO-252-3 surface-mount case, this component is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Tape and Reel |
| Rds On Max | 9mR |
| Package/Case | TO-252-3 |
| Package Quantity | 2000 |
| Input Capacitance | 3.065nF |
| Power Dissipation | 136W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 27ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 136W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 60V |
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