SQJ941EP-T1-GE3
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Краткое описание:
P-CH MOSFET 30V 8A Dual TrenchFET PowerPAK SO 8-Pin SMT
Дополнительная информация
P-channel Power MOSFET, 30V Drain-Source Voltage, 8A Continuous Drain Current. Features TrenchFET process technology for low on-resistance (24 mOhm at 10V). Dual configuration with 8 pins in a surface-mount PowerPAK SO package (4.9mm x 5.89mm x 1.07mm). Operating temperature range from -55°C to 175°C.
| PCB | 8 |
| ECCN | EAR99 |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 8 |
| Automotive | Yes |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | PowerPAK SO |
| AEC Qualified | Yes |
| Configuration | Dual |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 5.89 |
| Process Technology | TrenchFET |
| Package Height (mm) | 1.07(Max) |
| Package Length (mm) | 4.9 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.04 |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 55000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 35nC |
| Typical Gate Charge @ Vgs | 35@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 24@10VmOhm |
| Typical Input Capacitance @ Vds | 1500@10VpF |
| Maximum Continuous Drain Current | 8A |
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