SQJ962EP-T1-GE3
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Краткое описание:
60V 8A N-CH MOSFET, 2-Ch, 60mR RdsOn, SOIC
Дополнительная информация
N-channel MOSFET with 60V drain-source voltage and 8A continuous drain current. Features low 60mΩ drain-source on-resistance and 2N-channel configuration. Operates across a -55°C to 175°C temperature range with 25W maximum power dissipation. Surface mountable in an 8-pin PowerPAK SO package, this RoHS compliant component offers fast switching with 5ns turn-on delay and 6ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 475pF |
| Threshold Voltage | 2V |
| Number of Channels | 2 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 60mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 60mR |
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