SQM110N05-06L_GE3
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Краткое описание:
N-Channel MOSFET, 55V, 110A, 6mR, TO-263, Surface Mount
Дополнительная информация
N-Channel Power MOSFET featuring 55V drain-source voltage and 110A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 6mΩ drain-source resistance. Designed for surface mounting in a TO-263-3 package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 157W. Key switching characteristics include a 15ns turn-on delay and 15ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.41mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Packaging | Tape and Reel |
| Rds On Max | 6mR |
| Nominal Vgs | 2V |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 4.44nF |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 157W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 55V |
