SQM120P04-04L_GE3
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Power Field-Effect Transistor, 120A I(D), 40V, 0.004ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 120A I(D), 40V, 0.004ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Fall Time | 45ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 13.98nF |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 112ns |
| Max Power Dissipation | 375W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 40V |
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