SQR50N06-07L
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Краткое описание:
60V 50A N-CH Power MOSFET, Reverse DPAK, SMT
Дополнительная информация
N-channel enhancement mode power MOSFET in a reverse DPAK (TO-252) package, featuring a 60V drain-source voltage and 50A continuous drain current. This surface-mount component offers a low drain-source on-resistance of 7.6mΩ at 10V Vgs. It has a typical gate charge of 80nC and input capacitance of 4455pF at 25V Vds. The 4-pin (3+Tab) lead-frame SMT package with gull-wing leads is designed for high power dissipation up to 136W, operating from -55°C to 175°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| EU RoHS | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 4 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | Reverse DPAK |
| AEC Qualified | Yes |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.28 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 6.22(Max) |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.33(Max) |
| Package Length (mm) | 6.73(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 136000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 80nC |
| Typical Gate Charge @ Vgs | 80@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Drain Source Resistance | 7.6@10VmOhm |
| Typical Input Capacitance @ Vds | 4455@25VpF |
| Maximum Continuous Drain Current | 50A |
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