SQS420EN-T1-GE3
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Краткое описание:
N-CHANNEL MOSFET 20V 8A 18W Surface Mount
Дополнительная информация
The SQS420EN-T1-GE3 is a single N-CHANNEL MOSFET from Vishay with a maximum drain to source voltage of 20V and a continuous drain current of 8A. It features a maximum power dissipation of 18W and a threshold voltage of 600mV. The device is packaged in a small outline package and is suitable for surface mount applications. It operates over a temperature range of -55°C to 175°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Tape and Reel |
| Rds On Max | 28mR |
| Package Quantity | 3000 |
| Input Capacitance | 490pF |
| Threshold Voltage | 600mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 18W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 20V |
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