SSM3J15FU(TE85R,F)
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Краткое описание:
P-CH MOSFET, 30V, 0.1A, Si, SOT-323, SM
Дополнительная информация
P-channel enhancement mode MOSFET, single element, silicon, designed for small signal applications. Features a maximum drain-source voltage of 30V and a continuous drain current of 0.1A. Packaged in a 3-pin USM (SOT-323) surface-mount configuration with dimensions of 2mm x 1.25mm x 0.9mm. Offers a maximum gate threshold voltage of 1.7V and a maximum drain-source resistance of 12000 mOhm at 4V. Operates within a temperature range of -55°C to 150°C.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | SOT-323 |
| EU RoHS | Yes |
| Category | Small Signal |
| HTS Code | 8541210095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | USM |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 1.25 |
| Package Family Name | USM |
| Package Height (mm) | 0.9 |
| Package Length (mm) | 2 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.1(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Threshold Voltage | 1.7V |
| Maximum Drain Source Resistance | 12000@4VmOhm |
| Typical Input Capacitance @ Vds | 9.1@3VpF |
| Maximum Continuous Drain Current | 0.1A |
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