SSM3J317T

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SSM3J317T - Toshiba
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Краткое описание: P-CH MOSFET, 20V, 3.6A, SOT, SMT
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET, 20V Drain-Source Voltage, 3.6A Continuous Drain Current. Features 107mOhm maximum Drain-Source On-Resistance at 4.5V Gate-Source Voltage. Surface mountable in a 3-pin TSM (SOT) package with gull-wing leads, measuring 2.9mm x 1.6mm x 0.7mm. Operates from -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Channel Mode Enhancement
Channel Type P
Package/Case TSM
AEC Qualified No
Configuration Single
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.6
Package Family Name SOT
Package Height (mm) 0.7
Package Length (mm) 2.9
Radiation Hardening No
Max Operating Temperature 150°C
Maximum Power Dissipation 700mW
Min Operating Temperature -55°C
Typical Gate Charge @ Vgs 9.6@4VnC
Maximum Gate Source Voltage ±8V
Number of Elements per Chip 1
Maximum Drain Source Voltage 20V
Maximum Drain Source Resistance [email protected]mOhm
Typical Input Capacitance @ Vds 390@10VpF
Maximum Continuous Drain Current 3.6A

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