SSM3J327F

Не рекомендуется для новых проектов
SSM3J327F - Toshiba
Увеличить
Краткое описание: P-CH MOSFET 20V 3.5A S-MINI SMT
Производитель Toshiba
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (LTB)

Дополнительная информация

P-channel enhancement mode silicon power MOSFET designed for surface mount applications. Features a 20V drain-source voltage rating and a continuous drain current of 3.5A. Housed in a compact 3-pin S-Mini package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Offers a low drain-source on-resistance of 95mΩ at 4.5V gate-source voltage. Operates across a wide temperature range from -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Category Power MOSFET
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type P
Package/Case S-Mini
AEC Qualified No
Configuration Single
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.012
Package Width (mm) 1.5
Package Family Name S-MINI
Package Height (mm) 1.1
Package Length (mm) 2.9
Radiation Hardening No
Seated Plane Height (mm) 1.15
Max Operating Temperature 150°C
Maximum Power Dissipation 1200mW
Min Operating Temperature -55°C
Typical Gate Charge @ Vgs [email protected]nC
Maximum Gate Source Voltage ±8V
Number of Elements per Chip 1
Maximum Drain Source Voltage 20V
Maximum Drain Source Resistance [email protected]mOhm
Typical Input Capacitance @ Vds 290@10VpF
Maximum Continuous Drain Current 3.5A

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.