SSM3K36FS(T5L,F,D)

Снят с производства
SSM3K36FS(T5L,F,D) - Toshiba
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Краткое описание: N-CH MOSFET, 20V, 0.5A, Si, SOT-416, SMT
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel enhancement mode MOSFET, single element, silicon. 20V drain-source voltage, 0.5A continuous drain current. Surface mountable in a 3-pin SOT-416 (SSM) package with gull-wing leads, measuring 1.6mm x 0.8mm x 0.7mm. Features a maximum drain-source resistance of 630 mOhm at 5V and typical gate charge of 1.23 nC at 4V. Operates from -55°C to 150°C with a maximum power dissipation of 150mW.
PCB 3
ECCN EAR99
PPAP No
Jedec SOT-416
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case SSM
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.5
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 0.8
Package Family Name SSM
Package Height (mm) 0.7
Package Length (mm) 1.6
Seated Plane Height (mm) 0.9(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 150mW
Min Operating Temperature -55°C
Typical Gate Charge @ Vgs 1.23@4VnC
Maximum Gate Source Voltage ±10V
Number of Elements per Chip 1
Maximum Drain Source Voltage 20V
Maximum Drain Source Resistance 630@5VmOhm
Typical Input Capacitance @ Vds 46@10VpF
Maximum Continuous Drain Current 0.5A

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